FDS8433A mosfet equivalent, p-channel mosfet.
* -5 A, -20 V. RDS(on) = 0.047 Ω @ VGS = -4.5 V
RDS(on) = 0.070 Ω @ VGS = -2.5 V
* Fast switching speed.
* High density cell design for extremely low RDS(on)..
* Load switch
* DC/DC converter
* Battery protection
Features
* -5 A, -20 V. RDS(on) = 0.047 Ω @ VGS = .
This P-Channel enhancement mode power field effect transistors is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide supe.
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